Image sensor and method of fabricating the same

Abstract

An image sensor is provided, which prevents effectively the break or disconnection of transparent electrodes of photodiodes and which enhances its sensitivity. This sensor is comprised of (a) a transparent substrate; (b) a first dielectric layer formed over the substrate; (c) lower electrodes arranged at intervals on the first dielectric layer; (d) a patterned semiconductor layer formed on the first dielectric layer to overlap with the respective lower electrodes; (e) transparent upper electrodes formed on the semiconductor layer to overlap with the respective lower electrodes; (f) a second dielectric layer formed to cover the upper electrodes, the semiconductor layer, and the lower electrodes; and (g) a patterned signal line layer formed on the second dielectric layer; the signal line layer being electrically connected in common to the respective upper electrodes at the overlap parts of the semiconductor layer by way of contact holes of the second dielectric layer. The patterned semiconductor layer has island-shaped pixel parts defining pixel areas of the sensor for receiving incident light through the upper electrodes, overlap parts overlapping with the signal line layer, and interconnection parts interconnecting the pixel parts with the overlap parts. The upper electrodes, the pixel parts, and the lower electrodes constitute photodiodes.