The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2003

Filed:

May. 01, 2001
Applicant:
Inventors:

Seung-Sang Hwang, Seoul, KR;

Soon-Man Hong, Seoul, KR;

Eung-Chan Lee, Incheon, KR;

Seung-Pyo Hong, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C08G 7/704 ; C08G 7/706 ;
U.S. Cl.
CPC ...
C08G 7/704 ; C08G 7/706 ;
Abstract

The present invention relates to a highly regular and well-defined ladder structured polyorganosilsesquioxane with superior heat resistance, combustion resistance and flexibility. This product is made by alternatingly bonding together two kinds of substituents. The polyorganosilsesquioxane prepared according to the present invention has a small molecular weight distribution and a high molecular weight. It is soluble in organic solvents because its three-dimensional network structure is not formed as a result of a condensation polymerization, which resulted in a product having structure defect(s) and randomness because of the oligomer that was previously used as a starting material for polymerization. Polyalkylaromaticsilsesquioxanes obtained according to the preparing method of the present invention are useful, heat-resistant materials. They can be used as a heat-resistant coating agent, an agent for protecting optical fiber, a coating material for a resistor, heat-resistant paint, adhesive and releasing agent for precise molding. These ladder polymers can be used for a protective layer for semiconductors, interlayer dielectrics for semiconductor integration (e.g. LSI), resist material and as a new heat-resistant photoresist.


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