The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Oct. 22, 1999
Applicant:
Inventor:
Sergio Palara, Aci S. Antonio, IT;
Assignee:
STMicroelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A method for manufacturing a thick oxide layer on a semiconductive substrate is presented. The method comprises the formation of at least one layer of dielectric material on said substrate, followed by formation of a plurality of trench regions of a predetermined width in the substrate. A plurality of corresponding walls of semiconductive material of a second predetermined width are delimited. Finally, the semiconductor is submitted to a thermal treatment to oxidize said walls.