The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jun. 28, 2001
Masatoshi Anma, Hyogo, JP;
Kenichi Ooto, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device capable of preventing yield reduction and a method of manufacturing the same can be obtained. The method of manufacturing a semiconductor device including an element formation region arranged on a semiconductor substrate and an external region arranged on the semiconductor substrate and surrounding the element formation region, includes the steps of: providing the external region with an interlayer insulating film having a marking recess; providing a covering film extending from an internal portion of the marking recess to an upper surface of the interlayer insulating film; providing a filling film located on the covering film and filling at least the marking recess; and chemically mechanically polishing and moving the covering film on an upper surface of the interlayer insulating film, with the filing film filling at least the marking recess.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile