The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Dec. 20, 2001
Jae-soon Lim, Seoul, KR;
Seung-hwan Lee, Seoul, KR;
Han-mei Choi, Seoul, KR;
Yun-jung Lee, Seoul, KR;
Gab-jin Nam, Suwon, KR;
Ki-yeon Park, Seoul, KR;
Young-sun Kim, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Samsung Electronics, Co., LTD, Kyungki Do, KR;
Abstract
A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile