The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jul. 26, 2001
Applicant:
Inventors:
Jeffery S. Hess, Corvallis, OR (US);
Steven D. Leith, Albany, OR (US);
Donald W. Schulte, Corvallis, OR (US);
William Edwards, Albany, OR (US);
Jeffrey S. Obert, Corvallis, OR (US);
Timothy R. Emery, Corvallis, OR (US);
Assignee:
Hewlett-Packard Development Company, Houston, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A through-substrate etching process is monitored by providing a sacrificial electrode in proximity to a desired etch window on the substrate. An etch process is performed on the substrate. The etch process is monitored by measuring an electrical property of either the substrate or the sacrificial electrode or both.
Quick Actions:
Hess, Jeffery. (2003). Monitoring and test structures for silicon etching (U.S. Patent No. 6599761). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6599761
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile