The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Mar. 19, 2001
Jian-Qing Wang, New Orleans, LA (US);
Leszek M. Malkinski, Warszawa, PL;
University of New Orleans Research and Technology Foundation, Inc., New Orleans, LA (US);
Abstract
Uniaxial magnetic anisotropy was found in the Fe/Co/Cu/Co magnetoresistive structures deposited on Si ( ) substrates. Samples magnetized along an easy anisotropy axis showed extremely sharp magnetization and magnetoresistance switching at low fields and maximum giant magnetoresistance of 9.5% at 5K (5.5% at room temperature) for the samples with 5 nm of Fe,5 nm of Co, 2.5 nm of Cu and 2 nm of Co. These results were advantageous compared to Co/Cu/Co trilayers grown on Cr/Cu buffer which did not exhibit uniaxial anisotropy. Deposition on spinning wafers allowed excluding substrate related anisotropy. An existing magnetic field in the magnetron sputtering system with the strength of 32 Oe at the sample location was found the most probable source of the induced uniaxial anisotropy.