The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Dec. 12, 2000
Applicant:
Inventors:
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 3/302 ;
U.S. Cl.
CPC ...
C30B 3/302 ;
Abstract
A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.
Adachi, Hiroki. (2003). Method for manufacturing a semiconductor device (U.S. Patent No. 6599359). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6599359
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile