The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Aug. 18, 1998
Chan Yong Park, Daejeon, KR;
Seung Won Lee, Daejeon, KR;
Dug Bong Kim, Pusan, KR;
Kwang Ryong Oh, Daejeon, KR;
Hong Man Kim, Daejeon, KR;
Other;
Abstract
The present invention relates to an optical filter whose a sidelobe disturbing a characteristic of an optical filter by weighting an optical coupling efficiency between waveguides is controlled upon applying a selective area growth method in a wavelength selective variable semiconductor optical filter and method of fabricating the same. The present invention can control the thickness of growth layer selectively by controlling the width of the dielectric thin film mask whose the growth is not achieved in the selective area growth method, can control the distance between two waveguides of the wavelength selective variable semiconductor optical filter by applying the result on the distance control between two waveguides. Accordingly, there can be changed an optical coupling efficiency between two waveguides spatially. Because the sidelobe characteristics is largely improved if the distance between two waveguides is controlled temporarily to be corresponded to one period of Hamming function, there can be fabricated a semiconductor optical filter whose the characteristic is very excellent when applying the present invention.