The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Jun. 27, 2002
Yuankai Zheng, Singapore, SG;
Yihong Wu, Singapore, SG;
Xiaoyan Wang, Lund, SE;
Dan You, Singapore, SG;
Data Storage Institute, Singapore, SG;
Abstract
A circuit for controlling a read operation for a magnetic random access memory (MRAM) comprising an array of magnetic tunnel junctions (MTJ) having conducting row and column lines attached thereto. The circuitry comprises a current supply for providing a read current, and a row selector for selecting a row containing a junction to be read and applying the read current to that row with the respective row line. An unselected row switch switches to at least some of the row lines not connected to the MTJ to be read, and a voltage source applies, via the unselected row switch, a voltage to each of the unselected row lines that is substantially identical in level to the voltage on the selected row line. A column selector selects the column line connected to the array containing the MTJ to be read, and a voltage detector for detecting the voltage across the MTJ to be read via the selected column and row lines.