The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Apr. 28, 2000
Gil Rosenman, Rishon Le-Zion, IL;
Alexander Skliar, Lod, IL;
Moshe Oron, Rehovot, IL;
David Eger, Rehovot, IL;
Mordechai Katz, Ramat Gan, IL;
Other;
Abstract
A method of fabricating an invertedly poled domain structure having alternating sections of opposite electric polarities, from a ferroelectric crystal wafer ( ) having two opposite polar surfaces, comprises patterning at least one of the two polar surfaces of the wafer to comprise a plurality of alternating discrete regions, of which first regions are adapted for and second regions are protected from the direct application thereto of an electric contact; applying to both polar surfaces of the wafer electrically conducting electrodes ( and ) so that the first regions are in direct contact with the electrodes and the second regions are protected from such a contact; and applying to the electrodes an electrical field ( ) of the intensity E. The electrical field is applied to the wafer at a working temperature by heater/cooler ( ).