The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Jun. 13, 2001
Applicant:
Inventors:
Bhanwar Singh, Morgan Hill, CA (US);
Cristina Cheung, San Jose, CA (US);
Jay Bhakta, Sunnyvale, CA (US);
Carmen Morales, San Jose, CA (US);
Junwei Bao, Berkeley, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01B 1/106 ;
U.S. Cl.
CPC ...
G01B 1/106 ;
Abstract
A system and method are disclosed for providing in-situ monitoring of an oxidized ARC layer disposed over an ARC layer. By monitoring the thickness of the oxidized portion of the ARC layer during semiconductor processing, one or more process control parameters may be adjusted to help achieve a desired oxidized portion thickness. As a result, the number of process steps required to achieve the desired oxidized portion thickness may be reduced, providing a more efficient and economical process