The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Mar. 21, 2001
Masatoshi Arai, Nara, JP;
Takahiko Hashidzume, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A silicon dioxide film, located over an active region in a well, is annealed at 1050° C. within an N O ambient, thereby diffusing nitrogen into the silicon dioxide film and forming a nitrogen-containing silicon dioxide film. Next, two polysilicon films, interposing an ONO film therebetween, are deposited and then those films are patterned. In this manner, a memory gate electrode section, consisting of floating gate electrode, interelectrode insulating film and control gate electrode, is formed on the nitrogen-containing silicon dioxide film as a tunnel insulating film. At the same time, a select gate electrode section is also formed beside the memory gate electrode section. Then, p-type source/drain regions and intermediate diffused region are defined below these electrode sections. In this structure, electrons can be injected through a particular part of the tunnel insulating film and holes are trapped in a limited region of the tunnel insulating film.