The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Dec. 21, 2000
Applicant:
Inventors:
Hiroaki Tanizaki, Hyogo, JP;
Masatoshi Ishikawa, Hyogo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ;
Abstract
A read gate of a DRAM core cell includes first and second N channel MOS transistors having gates connected to a pair of bit lines through first and second nodes, respectively, and third and fourth MOS transistors having gates both of which receive a column selecting signal, with gate oxide films of the third and the fourth N channel MOS transistors being formed to be thinner than gate oxide films of the first and the second N channel MOS transistors. It is accordingly possible to lower an amplitude voltage of the column selecting signal, thereby enabling reduction of electric current consumption and speed-up of an operating rate of the DRAM core cell.