The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Feb. 19, 1999
Applicant:
Inventor:
Shingo Hashimoto, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/978 ; H01L 2/9167 ;
U.S. Cl.
CPC ...
H01L 2/978 ; H01L 2/9167 ;
Abstract
The present invention discloses a semiconductor device, and a method of fabricating the same, where the semiconductor device has a gate electrode, a source-drain diffused layer of a first conductivity type, and a sidewall insulating film formed on the side face of the gate electrode, wherein the source-drain diffused layer has a lightly doped region formed below the sidewall insulating film, and a heavily doped region with impurity concentration higher than that of the lightly doped region, and the lightly doped region includes at least two kinds of impurities of the first conductivity type.