The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Jun. 04, 2001
Capacitively coupled ferroelectric random access memory cell and a method for manufacturing the same
Applicant:
Inventors:
Glen Fox, Colorado Springs, CO (US);
Thomas Evans, Colorado Springs, CO (US);
Assignee:
Ramtron International Corporation, Colorado Springs, CO (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01C 2/974 ; H01C 2/996 ; H01C 3/1062 ; H01C 3/1113 ; H01C 3/1119 ;
U.S. Cl.
CPC ...
H01C 2/974 ; H01C 2/996 ; H01C 3/1062 ; H01C 3/1113 ; H01C 3/1119 ;
Abstract
A ferroelectric memory cell includes a ferroelectric capacitor including a bottom electrode, a ferroelectric layer formed on the bottom electrode and a top electrode formed on the ferroelectric layer, a high permittivity dielectric layer formed over the ferroelectric capacitor, wherein the high permittivity dielectric layer includes an encapsulation layer and completely covers the top electrode, and a local interconnect electrode formed on the encapsulation layer.