The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Mar. 08, 2002
Mark A. Eriksson, Madison, WI (US);
Mark G. Friesen, Middleton, WI (US);
Robert J. Joynt, Madison, WI (US);
Max G. Lagally, Madison, WI (US);
Daniel W. van der Weide, Madison, WI (US);
Paul Rugheimer, Madison, WI (US);
Donald E. Savage, Madison, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Semiconductor dot devices include a multiple layer semiconductor structure having a substrate, a back gate electrode layer, a quantum well layer, a tunnel barrier layer between the quantum well layer and the back gate, and a barrier layer above the quantum well layer. Multiple electrode gates are formed on the multi-layer semiconductor with the gates spaced from each other by a region beneath which quantum dots may be defined. Appropriate voltages applied to the electrodes allow the development and appropriate positioning of the quantum dots, allowing a large number of quantum dots be formed in a series with appropriate coupling between the dots.