The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
May. 15, 2001
Lisa McElwee-White, Gainesville, FL (US);
Timothy J. Anderson, Gainesville, FL (US);
Steven W. Johnston, San Jose, CA (US);
Carlos G. Ortiz, Houston, TX (US);
Omar J. Bchir, Gainesville, FL (US);
University of Florida, Gainesville, FL (US);
Abstract
Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula L W(NR)X , where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and L and X are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.