The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Sep. 17, 2001
Tae-Hyo Ro, Seoul, KR;
Ill-Hwan Jeoun, Suwon, KR;
Byung-Suk Park, Suwon, KR;
Yeon-Hong Jee, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
The semiconductor device comprises a silicon substrate, a first metal pattern layer which is deposited on the silicon substrate, an inter metal dielectric which is deposited on the silicon substrate including the first metal pattern layer and on which a connection hole is formed to partially expose the upper surface of the first metal pattern layer, a second metal pattern layer which is deposited on the inter metal dielectric and electrically interconnected to the first metal pattern layer by the connection hole, and a passivation layer which coats the silicon substrate including the second metal pattern layer and has an opening to partially expose the second metal pattern layer for electrically connecting the semiconductor device to external circuitry. The first metal pattern layer comprises a Ti/TiN layer, an Al layer, and a TiN layer, and the second metal pattern layer comprises a Ti layer and an Al layer. The passivation layer coats a portion of the second metal pattern layer, the portion being disposed on an inner portion of the connection hole. The present invention has some advantages in that it prevents the cutting of the Al layer on the concave corner of the second metal pattern layer and the exfoliating of the second metal pattern layer from the first metal pattern layer.