The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Aug. 20, 2001
Martin Schneegans, Vaterstetten, DE;
Stephan Wege, Weissig, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Metal/metal contacts are formed as part of a multilayer metallization in an integrated circuit on a semiconductor wafer. The application of an insulation layer on a metal level is followed by a lithography step using a photoresist mask to define contact holes on the insulation layer, followed by anisotropic etching of the insulation layer in order to produce the contact holes. Then, a chemical dry etch that removes the photoresist mask and a chemical-physical dry etch that removes organic impurities which accumulate during the chemical dry etch are successively carried out in a vacuum. Subsequently, a metal deposition step is carried out in order to fill the contact holes.