The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Oct. 18, 2001
Applicant:
Inventors:
Jingyu Lian, Walkkill, NY (US);
Greg Costrini, Hopewell Junction, NY (US);
Laertis Economikos, Wappingers Falls, NY (US);
Michael Wise, Lagrangeville, NY (US);
Assignee:
Other;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18242 ; H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/18242 ; H01L 2/100 ;
Abstract
The exposure of the interface between the bottom electrode and barrier layer to a high temperature oxygen ambience is avoided by recessed Pt-in-situ deposited with a barrier layer.
Quick Actions:
Lian, Jingyu. (2003). Recess pt structure for high k stacked capacitor in dram and fram, and the method to form this structure (U.S. Patent No. 6596580). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6596580
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