The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2003
Filed:
Apr. 04, 2001
Applicant:
Inventors:
Seok Woon Lee, Incheon, KR;
Seung Ki Joo, Seoul, KR;
Assignee:
PT Plus Co. Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/184 ;
U.S. Cl.
CPC ...
H01L 2/184 ;
Abstract
A thin film transistor (TFT) including a polycrystalline active layer and a method for making the same are disclosed. An amorphous silicon layer is deposited on a substrate and is crystallized by using MJLC (metal induced lateral crystallization) to provide a poly-silicon active layer of the TFT. Specifically, the amorphous silicon layer is poly-crystallized during a thermal treatment of the active layer. The thermal treatment causes the MILC of the active layer propagating from portions of the source and the drain regions on which MILC source metal is formed through the contact holes of the TFT.