The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Oct. 05, 2000
Applicant:
Inventor:
Roger Su-Tsung Tsai, Torrance, CA (US);
Assignee:
Northrop Grumman Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 2/500 ;
U.S. Cl.
CPC ...
G01R 2/500 ;
Abstract
A method of uniquely extracting both intrinsic and parasitic components from a single set of measured S-parameters is useful for extracting a single set of measured S-parameters for the development of non-linear Field Effect Transistor (FET) models. Competitive extraction where multiple trial solutions are attempted spanning a region or space of feedback impedances is used. Extraction is followed by optimization that reduces the extracted values to a model that better fits measured S-parameters. Optimization can be achieved by further evaluating the speed of convergence in an error metric.