The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2003

Filed:

Nov. 16, 2001
Applicant:
Inventor:

Edward H. Sargent, Toronto, CA;

Assignee:

Fox-Tek, Inc., West Chester, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 3/20 ;
U.S. Cl.
CPC ...
H01S 3/20 ;
Abstract

In a semiconductor laser, non-disordered quantum well active region functions as a lasing region. Surrounding the non-disordered quantum well active region is a disordered quantum well active region which prevents diffusion of injected carriers from the non-disordered quantum well active region or provides a lateral heterobarrier. The disordered quantum well active region is formed by rapid thermal annealing in which defects from one or two InP defect layers diffuse into the parts of the quantum well active region to be disordered.


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