The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Dec. 13, 2001
Applicant:
Inventors:
Stefan Lammers, South Burlington, VT (US);
Christian Arndt, Shelburne, VT (US);
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 ; G11C 1/100 ; G11C 8/00 ;
U.S. Cl.
CPC ...
G11C 7/00 ; G11C 1/100 ; G11C 8/00 ;
Abstract
This invention presents a novel write line segmentation architecture for writing magnetoresitive random access memories (MRAM). Only the memory cells in a selected segment get a high hard axis field generated by a write line current. Memory cells of deselected segments do not receive this hard axis field. This prevents an undesired state change in particularly sensitive memory cells.
Quick Actions:
Lammers, Stefan. (2003). Segmented write line architecture (U.S. Patent No. 6594191). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6594191
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile