The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Jul. 12, 2002
Applicant:
Inventor:
Yasuhiko Horie, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract
A tunnel gate insulating film is formed on a substrate. Next, a floating gate electrode containing no impurities in the vicinities of upper and lower end surfaces is formed on the tunnel gate insulating film. Then, the surface of the floating gate electrode is thermally oxidized to form a poly-gate oxide film.
Horie, Yasuhiko. (2003). Semiconductor memory device having controlled impurity concentration profile, method for manufacturing thereof, and semiconductor manufacturing apparatus (U.S. Patent No. 6594182). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6594182
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile