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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6594120 B1

PDFFull Text
Date of Patent:
Jul. 15, 2003

Filed:

May. 23, 2001

Magnetoresistive element and magnetic memory element and magnetic head using the same

Applicant:
Inventors:

Akihiro Odagawa, Nara, JP;

Hideaki Adachi, Osaka, JP;

Masayoshi Hiramoto, Nara, JP;

Nozomu Matukawa, Nara, JP;

Hiroshi Sakakima, Kyoto, JP;

Assignee:

Matsushita Electric Industrial Co., Ltd., Osaka, JP;

Attorney:

Merchant & Gould P.C.

Primary Examiner:

David L Ometz

Int. Cl.
CPC ...
G11B 5/39 ; H01L 3/922 ; H01L 3/908 ;
U.S. Cl.
CPC ...
G11B 5/39 ; H01L 3/922 ; H01L 3/908 ;
Abstract

The present invention provides a magnetoresistive element in which discontinuity at a barrier layer interface is provided by utilizing a layered-perovskite oxide, and a device in which the foregoing magnetoresistive element is used. The element of the present invention includes a layered-perovskite oxide having a composition expressed by a formula L (A R ) A M O and including a (L-O) layer in its crystalline structure, and a pair of ferromagnetic bodies formed in contact with the layer perovskite oxide so as to sandwich the oxide. In response to bias application via the (L-O) layer, a magnetoresistive tunnel effect appears. In the foregoing formula, A represents at least one alkaline earth element selected from the group consisting of Ca, Sr, and Ba, L represents at least one element selected from the group consisting of Bi, Tl, and Pb, M represents at least one element selected from the group consisting of Ti, V, Cu, Ru, Ni, Mn, Co, Fe, and Cr, R represents a rare earth element, n is 1, 2, or 3, and x and z are numerical values satisfying &minus;1&lE;x&lE;1, and 0&lE;z<1, respectively.

Find Patent Forward Citations

Odagawa, Akihiro. (2003). Magnetoresistive element and magnetic memory element and magnetic head using the same (U.S. Patent No. 6594120). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6594120

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