The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Dec. 05, 2000
Infineon Technologies AG, Munich, DE;
Abstract
A semiconductor memory cell, in accordance with the present invention includes a deep trench formed in a substrate. The deep trench includes a storage node in a lower portion of the deep trench, and a gate conductor formed in an upper portion of the deep trench. The gate conductor is electrically isolated from the storage node. An active area is formed adjacent to the deep trench and is formed in the substrate to provide a channel region of an access transistor of the memory cell. A buried strap is formed to electrically connect the storage node to the active area when the gate conductor is activated. A body contact is formed opposite the deep trench in the active area and corresponding in position to the buried strap to prevent floating body effects due to outdiffusion of the buried strap. Methods for forming the body contact are also described.