The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Dec. 21, 1999
Dev Alok, Danbury, CT (US);
Koninklijke Philips Electonics N.V., Eindhoven, NL;
Abstract
A lateral metal-oxide-semiconductor field effect transistor (LMOSFET) includes a layer of silicon carbide semiconductor material having a p-type conductivity, source and drain regions having n-type conductivities disposed in the silicon carbide semiconductor layer, and an insulated gate electrode disposed on the silicon carbide semiconductor layer. A silicon carbide semiconductor substrate having an n-type conductivity, supports the silicon carbide semiconductor layer. A second layer of silicon carbide semiconductor material having a p-type conductivity, is disposed between the substrate and the first silicon carbide semiconductor layer to prevent parasitic transistor effects. A sinker region having an n-type conductivity extends from the source contact to the silicon carbide semiconductor substrate to ground the substrate.