The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Aug. 01, 1996
Applicant:
Inventor:
Maria Chan, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 ;
U.S. Cl.
CPC ...
B44C 1/22 ;
Abstract
A method for plasma etching of silicon nitride using a mixture of trifluoromethane and oxygen in a ratio of approximately 8 to 1 to selectively etch silicon nitride in preference to silicon dioxide and photoresist, resulting in critical dimension gain.