The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Aug. 16, 2002
Applicant:
Inventor:
Thomas Morgenstern, Dresden, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1311 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/1311 ; H01L 2/144 ;
Abstract
The invention is directed to a process for forming a recess in at least one polysilicon overfilled trench in an integrated circuit. The process includes the following steps: uniformly etching the polysilicon overfill layer; stopping the etching before the polysilicon layer is completely removed from the surface of the integrated circuit; and recess etching the polysilicon layer with microtrenching properties for forming a substantially planar recess near the top of the at least one trench.