The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Jun. 05, 2001
Sung Gyu Pyo, Kyungki-Do, KR;
Hynix Semiconductor Inc., Kyungki-do, KR;
Abstract
A method of forming a metal wiring in a semiconductor device. A copper wiring is formed by means of CECVD method by which a chemical enhancer layer is utilized for increasing the deposition speed of copper. The damascene pattern is filled by means of MOCVD method using a copper precursor in order to increase the deposition speed. The chemical enhancer layer rises to the surface of copper after deposition of copper by a CECVD method and then the relatively high resistivity chemical enhancer layer that has risen to the surface of copper by plasma process is removed. Therefore, the ultra-fine damascene pattern can be rapidly filled with copper without increasing the resistance of the copper wiring.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile