Stable memory device that utilizes ion positioning to control state of the memory device

Abstract

The memory element of the present invention utilizes a substrate, a first conductive connection, a second conductive connection, and an ionic layer. The substrate includes a source region, a drain region, and a channel region, which is disposed between the source region and the drain region. The ionic layer includes ions and is coupled to the substrate. The first connection is coupled to the source region, and the second connection is coupled to the drain region. An electrical field is applied through said ionic layer such that the ions in the ionic layer move. When the memory element is to exhibit a logical high state, the polarity of the electrical field causes the ions to move toward the channel region. This pulls the electrons in the source and drain regions into the channel region making the channel region conductive. When the memory element is to exhibit a logical low state, the polarity of the electrical field causes the ions to move away from the channel region. As a result, the channel region becomes non-conductive, and the first conductive connection is, therefore, insulated from the second conductive connection.