The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Sep. 20, 2001
Seong-Soon Cho, Kyunggi-do, KR;
Samsung Electronics., Ltd., Suwon, KR;
Abstract
A non-volatile memory device and a fabrication method thereof are provided. A first polysilicon layer, an inter-gate dielectric layer, a second polysilicon layer and a capping layer are stacked sequentially. A first opening is formed through the inter-gate dielectric layer, the second polysilicon layer and the capping layer, thereby exposing the first polysilicon layer. A second opening is formed through the capping layer, thereby exposing the second polysilicon layer. On the resultant structure, a metal layer is formed and then thermally treated. As a result a metal silicide layer can be formed on the exposed portion of the first polysilicon layer and the exposed portion of the second polysilicon layer.