The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Nov. 22, 2000
Applicant:
Inventors:
Takuya Kitamura, Tokyo, JP;
Hiroki Koga, Tokyo, JP;
Assignee:
NEC Electronics Corporation, Kanagawa-Pref., JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
In a non-volatile semiconductor memory device that has a floating gate that is formed on a semiconductor substrate with an intervening first gate insulation film, a second gate insulation film that is formed on the floating gate electrode, and a control gate that is provided over this second gate insulation film, at least two trenches are formed in the floating gate.
Quick Actions:
Kitamura, Takuya. (2003). Method for manufacturing non-volatile semiconductor memory device (U.S. Patent No. 6593186). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6593186
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile