The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Jun. 17, 2002
Darlene G. Hamilton, San Jose, CA (US);
Narbeh Derhacobian, Belmont, CA (US);
Janet S. Y. Wang, San Francisco, CA (US);
Kulachet Tanpairoj, Palo Alto, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method and system for programming of the normal bits of a memory array of dual bit memory cells is accomplished by programming at a substantially high delta VT. The substantially higher VT assures that the memory array will maintain programmed data and erase data consistently after higher temperature stresses and/or customer operation over substantial periods of time. Furthermore, by utilizing substantially high gate and drain voltages during programming, programming times are kept short without degrading charge loss. A methodology is provided that determines the charge loss for single bit operation during program and erase cycles. The charge losses over cycling and stress are then utilized to determine an appropriate delta VT to be programmed into a command logic and state machine.