The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
May. 18, 2001
Motoko Tanaka, Tokyo, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A nonvolatile semiconductor memory device, wherein a poly-silicon film is formed on the entire surface of a memory cell region and a peripheral circuit region, and the poly-silicon film on an element isolating insulation film between the gate insulation films of the memory cell region is selectively removed to form a floating gate base layer. Subsequently, an ONO film is formed on the entire surface, and the poly-silicon film and the ONO film is removed from the peripheral circuit region. A conductive film is then formed on the entire surface, a control gate and a floating gate patterned, and a gate electrode then patterned, although at this point, the ONO film and the poly-silicon film are removed from a boundary region, and when the gate electrode is formed, the element isolating insulation film is carved out and a groove is formed in the region where the conductive film is removed by etching.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile