The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Jul. 27, 2001
Applicant:
Inventors:
Andrea Ghilardelli, Cinisello Balsamo, IT;
Stefano Ghezzi, Treviolo, IT;
Carla Maria Golla, Sesto San Giovanni, IT;
Assignee:
SGS-Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/702 ;
U.S. Cl.
CPC ...
H01L 2/702 ;
Abstract
A MOS capacitor comprises a semiconductor substrate, a first well region of a first conductivity type formed in the substrate, at least one doped region formed in the first well region, and an insulated gate layer insulatively disposed over a surface of the first well region. The at least one doped region and the insulated gate layer respectively form a first and a second electrode of the capacitor. The first well region is electrically connected to the at least one doped region to be at a same electrical potential of the first terminal of the capacitor.