The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Feb. 02, 2001
Chin Kyo Kim, Seoul, KR;
Tae Kyung Yoo, Kyonggi-do, KR;
LG Electronics Inc., Seoul, KR;
Abstract
A nitride semiconductor light-emitting element is disclosed. An n type AlGaN cladding layer is grown on a GaN substrate, and an InGaN active layer of a quantum well structure is grown on the n type AlGaN cladding layer at a temperature of about 800° C. or less. Subsequently, a buffer layer of any one of GaN, AlGaN, and InGaN is grown on the InGaN active layer at a temperature of about 900° C. or less. A p type AlGaN cladding layer and a p type GaN electrode layer are sequentially grown on the buffer layer. A p type electrode is formed over the p type GaN electrode layer while an n type electrode is formed below the substrate or over the n type cladding layer. Thus, the nitride semiconductor light-emitting element having high efficiency optical characteristic and thermal characteristic can be obtained.