The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Jul. 16, 2002
Applicant:
Inventors:
Rajesh S. Nair, Chandler, AZ (US);
Zia Hossain, Tempe, AZ (US);
Takeshi Ishiguro, Aizuwakamatsu, JP;
Mohamed Imam, Tempe, AZ (US);
Assignee:
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A method of forming a semiconductor device ( ) forms a plurality of P and N stripes ( ) within a first region ( ) that is formed with an opposite conductivity to a substrate ( ). The plurality of P and N stripes assist in providing a low on-resistance. A portion ( ) of the first region underlies the P and N stripes and protects the semiconductor device from high voltages applied to the drain. A base layer ( ) and a cap layer ( ) further reduce the on-resistance of the semiconductor device.