The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Oct. 12, 2000
Hyo-Dong Ban, Kyonggi-do, KR;
Young-Hun Park, Kyonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A first interlayer insulating layer is formed over a semiconductor substrate having a semiconductor element. A first line is formed on the first interlayer insulating layer and is connected to the semiconductor element via a contact hole. A second interlayer insulating layer is formed over the first line and the first interlayer insulating layer. An etch barrier layer is formed on the second interlayer insulating layer. A buried contract hole extends through the etch barrier layer and the first and second interlayer insulating layers. An insulating spacer is formed on the side walls of the buried contact hole. A second line is formed on the etch barrier layer and connected to the semiconductor element via the buried contact hole. The buried contact hole has a substantially vertical profile at a top end thereof to provide a sufficient misalignment margin between the buried contact hole and the second line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile