The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Dec. 18, 2000
Sung Kwon Lee, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
Fabricating thin film transistors. A gate electrode is formed on a substrate. A gate oxide film is then formed on the gate electrode. A polysilicon layer is deposited on the gate oxide film. An impurity ion is implanted into the polysilicon layer to control a threshold voltage of the polysilicon layer. A mask is formed on the polysilicon layer above the gate electrode, having the same width as the gate electrode. A second impurity ion is implanted into the exposed portion of the polysilicon layer using the mask, to form a lightly doped offset region on a drain region. The mask is removed. A second mask is formed on the polysilicon layer so as to cover a portion of the gate electrode and the light doped offset region. A Third impurity ion is implanted into the polysilicon layer using the second mask to form source/drain regions. The mask is removed.