The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Jul. 25, 2001
Applicant:
Inventors:
Hiroko Kubo, Uji, JP;
Kenji Yoneda, Kyoto, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/184 ; H01L 2/1338 ; H01L 2/1337 ; H01L 2/18238 ; H01L 2/1425 ;
U.S. Cl.
CPC ...
H01L 2/184 ; H01L 2/1338 ; H01L 2/1337 ; H01L 2/18238 ; H01L 2/1425 ;
Abstract
A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the silicon germanium layer. Thereafter, a gate electrode is formed by patterning the silicon germanium layer and the upper silicon layer.