The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Jul. 17, 2002
Jae-Deok Park, Seoul, KR;
LG Electronics Inc., Seoul, KR;
Abstract
A method of forming a thin film transistor, includes: forming an active region on a first insulating layer, the active region having a channel region, at least one sub-channel region, and first regions disposed between the channel region and each sub-channel region; sequentially forming a second insulating layer and a first conductive layer over the first insulating layer; patterning the second insulating layer and the first conductive layer to form a gate insulating layer and gate electrode on a channel region of the active layer, and to form a sub-gate insulating layer and associated sub-gate electrode on each sub-channel region of the active layer; forming a mask covering at least a portion of the gate electrode, at least a portion of each sub-gate electrode, and each first region of the active region; and implanting impurities into exposed portions of the active region using the mask to form a source region on a first side of the channel region and a drain region on a second side of the channel region such that each sub-gate region is disposed between the channel region and one of the drain region and the source region.