The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
May. 07, 2002
Dong-Hee Kim, Gyeongsangbuk-Do, KR;
LG. Philips LCD Co., Ltd., Seoul, KR;
Abstract
A method for re-forming a semiconductor layer of a thin film transistor-liquid crystal display device, including the steps of forming a gate electrode on a substrate, and forming a first gate insulation film on the gate electrode and the substrate; forming a semiconductor layer on the first gate insulation film; etching the semiconductor layer to remove the semiconductor layer if the formed semiconductor layer is defective; etching an upper portion of the first gate insulation film to a certain thickness damaged as the interface is exposed to the air by the etching of the semiconductor layer; forming a second gate insulation film on the remaining first gate insulation film; and forming a semiconductor layer on the second gate insulation film. Since the gate insulation film is partially etched at the upper portion, rather than being completely etched, and re-formed to a planned thickness and then the semiconductor layer is re-formed, the electric characteristics of the display device are prevented from being degraded by the damage to the interface of the gate insulation film.