The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Oct. 09, 2001
Koichi Haga, Miyagi, JP;
Tohoku Techno Arch Co., Ltd., , JP;
Abstract
The surface of a silicon substrate is covered with a natural oxide film having a thickness of several tens of angstroms. In an initial process, the natural oxide film is removed with hydrogen fluoride (HF) diluted with pure water to 10% (process(1)). The surface of the silicon substrate from which the oxide film has been removed is covered with hydrogen atoms. A large amount of plasma energy is applied to the silicon substrate in a process (2) for depositing a ZnO thin film thereon by sputtering. Hydrogen is dissociated by this energy at low temperature as well as a thin film buffer layer, in which an amorphous material and fine crystals are mixed, is formed by easing the difference of lattice intervals between silicon and zinc oxide. Next, in a process (3), a ZnO thin film of high quality is formed on the buffer layer by MO-CVD using it as a seed crystal. With this arrangement, a zinc oxide semiconductor member suitable for a light receiving element can be formed on a silicon substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile