The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Sep. 05, 2001
Yoshiyuki Hisada, Okazaki, JP;
Shinichi Mukainakano, Nagoya, JP;
Takeshi Hasegawa, Nagoya, JP;
Ayahiko Ichimiya, Nagoya, JP;
Tomohiro Aoyama, Nagoya, JP;
Kiyoshige Kato, Hazu-gun, JP;
Denso Corporation, Kariya, JP;
Abstract
In a process of producing a SiC device, a Si layer is formed on the surface of a SiC substrate, and the Si layer is removed from the surface of the SiC substrate by supplying oxygen gas to the Si layer in a high ambient temperature and a low ambient pressure. The pressure is set at 1×10 to 1×10 Pa. Thus a cleaned surface of the SiC substrate, not contaminated by carbon and the like in atmospheric air, can be provided. Preferably, the oxygen pressure and temperature are set at about 10 Pa and 1000° C. for removing the Si layer. Thereafter, the oxygen is further supplied to raise the pressure to about 10 Pa to form an oxide film on the cleaned SiC substrate. Thus, the SiC substrate is cleaned and then formed with the oxide layer in the same chamber by changing the ambient pressure but without changing the ambient temperature.