The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Aug. 10, 2001
Applicant:
Inventor:
Takashi Matsuoka, Kanagawa, JP;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1036 ; H01L 2/922 ; H01L 2/924 ; C30B 1/00 ; C30B 2/920 ; H01S 5/40 ;
U.S. Cl.
CPC ...
H01L 3/1036 ; H01L 2/922 ; H01L 2/924 ; C30B 1/00 ; C30B 2/920 ; H01S 5/40 ;
Abstract
In a sapphire substrate having a heteroepitaxial growth surface, the heteroepitaxial growth surface is parallel to a plane obtained by rotating a (01{overscore (1)}0) plane of the sapphire substrate about a c-axis of the sapphire substrate through 8° to 20° in a crystal lattice of the sapphire substrate. A semiconductor device, electronic component, and crystal growing method are also disclosed.