The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Jan. 19, 2000
Zoran Krivokapic, Santa Clara, CA (US);
William D. Heavlin, El Granada, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
When Tilted Channel Implant (TCI) is performed on transistor precursor structures having an etch-defined gate length (L ) and a trim-defined sidewall thickness (S ), mass production deviations may cause errors and cause shifts in the lateral placement and implant depth of TCI dopants. Countering adjustments to TCI dosage and TCI energy are automatically made in accordance with the invention. In one embodiment, a first linear or quasi-linear interpolation function is used having form: Energy =E *(1+&bgr;*e /S ), where multiplying factor &bgr; may either be a constant or a function of normalized sidewall error value, e /S . In the same embodiment, a second linear or quasi-linear interpolation function is used having form: Dose =Dose *(1+&agr;(L −L )/L ), where multiplying factor &agr; is a constant or a function of normalized gate length error value, (L −L )/L .