The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2003
Filed:
Apr. 18, 2002
Klaus M. Hummler, Poughkeepsie, NY (US);
Arnd R. Scholz, Dresden, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A trench top isolation (TTI) layer ( ) and method of forming thereof for a vertical DRAM. A first assist layer ( ) is disposed over trench sidewalls ( ) and trench capacitor top surfaces ( ). A second assist layer ( ) is disposed over the first assist layer ( ). The second assist layer ( ) is removed from over the trench capacitor top surface ( ), and the first assist layer ( ) is removed from the trench capacitor top surface ( ) using the second assist layer ( ) as a mask. The second assist layer ( ) is removed, and a first insulating layer ( ) is disposed over the first assist layer ( ) and trench capacitor top surface ( ). A second insulating layer ( ) is disposed over the first insulating layer ( ), and the second insulating layer ( ) is removed from the trench sidewalls ( ). The first insulating layer ( ) and the first assist layer ( ) are removed from the trench sidewalls ( ). The TTI layer ( ) comprises the first and second insulating layer portions ( ) that are left remaining over the trench capacitors ( ). The TTI layer ( ) has a greater thickness over the trench capacitor inner regions ( ) than over the trench capacitor outer regions ( ).